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>> No.1586160 [View]
File: 32 KB, 900x426, JFET-Polarity-Conventions.jpg [View same] [iqdb] [saucenao] [google]
1586160

>>1586157
So as a continuation from this topic, images of JFETs are often like this, with a gate connection on both sides. I find it a bit odd that we force the same polarity of electric charge on both sides of the D-S junction, since wouldn't that mean that in the very middle of the junction there will be an area with exactly the same electric field as without any charge on the gate? Wouldn't this make the device impossible to get into a completely insulating condition? Or is the "near enough" case good enough for basically all purposes?

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